Water-vapour-assisted growth of ZnO nanowires on a zinc foil and the study of the effect of synthesis parameters

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Srivastava, Himanshu ^a   Tiwari, Pragya ^a   Srivastava, A K ^a   Porwal, Sanjay ^a   Deb, S K ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TIME; NUMBER DENSITY; OPTICAL QUALITIES; OPTIMUM SYNTHESIS; PRESENCE OF WATER; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPE; SYNTHESIS PARAMETERS; TEM OBSERVATIONS; THERMAL OXIDATION; TRANSMISSION ELECTRON MICROSCOPE; UV-VIS ABSORPTIONS; ZN IONS; ZNO NANOWIRES;

ANNEALING; ASPECT RATIO; ELECTRON MICROSCOPES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

NANOWIRES;

EID: 80051957302     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085030     Document Type: Article

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