Emission spectra from AlN and GaN doped with rare earth elements

Journal of Alloys and Compounds

Volumn 408-412, Issue , 2006, Pages 717-720

  Choi, Sung Woo ^a   Emura, Shuichi ^a   Kimura, Shigeya ^a   Kim, Moo Seong ^a   Zhou, Yi Kai ^a   Teraguchi, Nobuaki ^b   Suzuki, Akira ^c   Yanase, Akira ^a   Asahi, Hajime ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Impurities in semiconductors; Luminescence; Phosphors; Semiconductors; Time resolved optical spectroscopy

Indexed keywords

EMISSION SPECTROSCOPY; GALLIUM NITRIDE; PHONONS; PHOSPHORS; PHOTOLUMINESCENCE; RARE EARTH ELEMENTS; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

BAND EMISSION; IMPURITIES IN SEMICONDUCTORS; ORBITAL TRANSITIONS; TIME-RESOLVED OPTICAL SPECTROSCOPY;

ALUMINUM NITRIDE;

EID: 31344477292     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2005.01.091     Document Type: Conference Paper

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