Demonstration of ditertiary butyl sulfide as a dopant source for n-Type InP by metalorganic vapor-phase epitaxy

Applied Physics Express

Volumn 4, Issue 8, 2011, Pages

  Ostinelli, Olivier ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT INCORPORATION; DOPANT SOURCES; DOPING EFFICIENCY; FREE ELECTRON CONCENTRATION; INCORPORATION MECHANISM; INP; METAL-ORGANIC; METAL-ORGANIC VAPOR PHASE EPITAXY; N-TYPE DOPING; ROOM TEMPERATURE; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENT; TRIMETHYLINDIUM; V/III RATIO;

DESORPTION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; PHOSPHORUS COMPOUNDS; VAPORS;

DOPING (ADDITIVES);

EID: 80051597114     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.085501     Document Type: Article

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