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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

(7) Hong, Sahwan a Xiao Long, Deng a Hwang, Inrok a Kim, Jin Soo a Chang Park, Yun b Kang, Sung Oong c Ho Park, Bae a

a Konkuk University (South Korea)

b National Nano Fab Center (NNFC) (South Korea)

c Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; CUPROUS OXIDE; ELECTRO REDUCTION; HARD BREAKDOWN; LOW-RESISTANCE STATE; METALLIC FILAMENTS; MICRO-STRUCTURAL; OXYGEN CONTENT; OXYGEN GAS; OXYGEN IONS; RESISTIVE SWITCHING MECHANISMS; STOICHIOMETRIC CHANGES; SWITCHING CYCLES; SWITCHING MODEL; SWITCHING PROPERTIES;

CATHODES; ELECTROLYTIC REDUCTION; OXYGEN; PHASE INTERFACES; SWITCHING SYSTEMS;

SWITCHING;

EID: 80051594449 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3619833 Document Type: Article

Times cited : (20)

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- See supplementary material at [E-APPLAB-99-052131] for more information about microstructural and compositional characteristics.
- See supplementary material at [http://dx.doi.org/10.1063/1.3619833 E-APPLAB-99-052131] for more information about microstructural and compositional characteristics.

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