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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Atomic-layer-deposited Al2O3 on Bi2Te 3 for topological insulator field-effect transistors

(2) Liu, Han a Ye, Peide D a

a PURDUE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALD PRECURSOR; ATOMIC LAYER DEPOSITED; CHANNEL MATERIALS; DEVICE PERFORMANCE; DUAL GATES; ELECTRICAL CHARACTERIZATION; HIGH-K DIELECTRIC; MODULATION RATES; TOP-GATE;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTRIC INSULATORS; MESFET DEVICES; SURFACE CHEMISTRY; TRANSISTORS;

BISMUTH;

EID: 80051582021 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3622306 Document Type: Article

Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.