Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

Journal of Physics D: Applied Physics

Volumn 44, Issue 33, 2011, Pages

  Guerrero Lemus, R ^a   Montesdeoca Santana, A ^a   Gonzlez Diaz B ^a   Diaz Herrera B ^a   Velzquez, J J ^a   Hernndez Rodriguez C ^a   Jimenez Rodriguez E ^a  

^a UNIVERSIDAD DE LA LAGUNA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; DOPING PROCESS; ENERGY CONVERTERS; EXCITATION SPECTRUM; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; IMPREGNATION METHODS; INITIAL CONCENTRATION; MONOCRYSTALLINE; PHOTOLUMINESCENT EMISSION; PHOTOLUMINESCENT INTENSITY; POROUS SILICON LAYERS; RARE EARTH CONCENTRATION; RARE EARTH IONS; SILICON-BASED; THIRD GENERATION;

ANNEALING; ANTIREFLECTION COATINGS; EUROPIUM; GEOCHEMISTRY; INFRARED SPECTROSCOPY; METAL IONS; RARE EARTHS; RATING; SCANNING ELECTRON MICROSCOPY; SOLAR ENERGY;

POROUS SILICON;

EID: 80051530351     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/33/335103     Document Type: Article

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