Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

Solid-State Electronics

Volumn 52, Issue 8, 2008, Pages 1193-1196

  Lee, H C ^a   Park, J B ^a   Bae, J W ^a   Thuy, Pham Thi Thu ^a   Yoo, M C ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Verticle Inc   (United States)

Author keywords

Dry etching; GaN; Light emitting diode

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ETCHING; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; METALLIZING; OPTICAL DESIGN; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTORESISTS; PLASMA DIAGNOSTICS; PLASMA DIODES; PLASMA ETCHING; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; TEXTURES;

CAVITY WALLS; EMISSION EFFICIENCIES; EXTRACTION EFFICIENCIES; GAN BASED LIGHT EMITTING DIODES; INDUCTIVELY COUPLED PLASMA ETCHING (ICP); LASER LIFT OFF (LLO); LIGHT OUTPUT EFFICIENCY; PATTERNED SURFACES; SURFACE AREA (SA); SURFACE TEXTURING; VERTICAL ELECTRODES; VERTICAL LIGHT EMITTING DIODES (VLED);

LIGHT EMITTING DIODES;

EID: 48649092537     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.05.005     Document Type: Article

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