High near-ultraviolet Raman efficiency of silicon nanowires with small cross sections

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 15, 2011, Pages

  Poborchii, Vladimir ^a   Tada, Tetsuya ^a   Morita, Yukinori ^a   Kanayama, Toshihiko ^a   Geshev, Pavel I ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961108614     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.153412     Document Type: Article

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