Edge-enhanced Raman scattering in Si nanostripes

Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

  Poborchii, Vladimir ^a,b   Tada, Tetsuya ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCED RAMAN SCATTERINGS; ENHANCEMENT EFFECTS; EXCITATION WAVELENGTHS; HIGH CONCENTRATIONS; LOCAL STRESS; NANOSTRIPES; RAMAN MEASUREMENTS; RAMAN SIGNALS; SCATTERED LIGHTS; SI DEVICES; SINGLE NANOWIRES;

ELECTRIC FIELDS; SILICON;

EDGE DETECTION;

EID: 64149126038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110964     Document Type: Article

References (8)

1. S. Kawata and V. M. Shalaev, Tip Enhancement (Elsevier, The Netherlands, 2007).
2. V. Poborchii, T. Tada, and T. Kanayama, Appl. Phys. Lett. 0003-6951 10.1063/1.2400057 89, 233505 (2006).
3. V. Poborchii, T. Tada, and T. Kanayama, Appl. Phys. Lett. 0003-6951 10.1063/1.2825286 91, 241902 (2007).
4. D. E. Aspnes, in Properties of Crystalline Silicon, edited by, R. Hull, (INSPEC, London, UK, 1999).
5. M. Mansuripur, J. Opt. Soc. Am. A 3, 2086 (1986). 0740-3232
6. I. H. Campbell and P. M. Fauchet, Solid State Commun. 0038-1098 10.1016/0038-1098(86)90513-2 58, 739 (1986).
7. S. M. Hu, J. Appl. Phys. 0021-8979 10.1063/1.345795 67, 1092 (1990).
8. E. Bonera, M. Fanciuli, and G. Carnevale, J. Appl. Phys. 0021-8979 10.1063/1.2219899 100, 033516 (2006).