Electrical properties of γ-In2Se3 layers synthesized by solid state reaction between In and Se thin films

Materials Chemistry and Physics

Volumn 48, Issue 1, 1997, Pages 5-9

  Bernede J C ^a   Marsillac, S ^a   Conan, A ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

Electrical properties; Grain boundaries; In2Se3

Indexed keywords

ANNEALING; CONTAMINATION; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SURFACE STRUCTURE; SURFACE TESTING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING INDIUM SELENIDE; SOLID STATE REACTIONS;

THIN FILMS;

EID: 0031096529     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80068-5     Document Type: Article

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