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Volumn 19, Issue 16, 2011, Pages 14913-14918

Optical attenuation in ion-implanted silicon waveguide racetrack resonators

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROMAGNETIC WAVE ABSORPTION; IONS; LIGHT ABSORPTION; RESONATORS; WAVEGUIDES;

EID: 79961066969     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.014913     Document Type: Article
Times cited : (14)

References (15)
  • 1
    • 1642465046 scopus 로고    scopus 로고
    • Optical power monitoring function compatible with single chip integration on silicon-on-insulator
    • Atlanta, GA, 23-38 March, OFC 2003
    • A. Knights, A. House, R. MacNaughton, and F. Hopper, "Optical power monitoring function compatible with single chip integration on silicon-on-insulator," in Proc. Optical Fiber Communications Conference, Atlanta, GA, 23-38 March 2003 (OFC 2003), p. 705.
    • (2003) Proc. Optical Fiber Communications Conference , pp. 705
    • Knights, A.1    House, A.2    MacNaughton, R.3    Hopper, F.4
  • 2
    • 21344469669 scopus 로고    scopus 로고
    • Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm
    • J. B. Bradley, P. E. Jessop, and A. P. Knights, "Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm," Appl. Phys. Lett. 86 (24), 241103 (2005).
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.24 , pp. 241103
    • Bradley, J.B.1    Jessop, P.E.2    Knights, A.P.3
  • 4
    • 76249117668 scopus 로고    scopus 로고
    • Modifying functionality of variable optical attenuator to signal monitoring through defect engineering
    • J. K. Doylend, A. P. Knights, B. J. Luff, R. Shafiiha, M. Asghari, and R. M. Gwilliam, "Modifying functionality of variable optical attenuator to signal monitoring through defect engineering," Electron. Lett. 46 (3), 234 (2010).
    • (2010) Electron. Lett. , vol.46 , Issue.3 , pp. 234
    • Doylend, J.K.1    Knights, A.P.2    Luff, B.J.3    Shafiiha, R.4    Asghari, M.5    Gwilliam, R.M.6
  • 5
    • 2842533337 scopus 로고
    • Infrared absorption and photoconductivity in irradiated silicon
    • H. Y. Fan and A. K. Ramdas, "Infrared absorption and photoconductivity in irradiated silicon," J. Appl. Phys. 30 (8), 1127 (1959).
    • (1959) J. Appl. Phys. , vol.30 , Issue.8 , pp. 1127
    • Fan, H.Y.1    Ramdas, A.K.2
  • 6
    • 36049055660 scopus 로고
    • 1.8-, 3.3-, and 3.9μm bands in irradiated silicon: Correlations with the divacancy
    • L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, "1.8-, 3.3-, and 3.9μm bands in irradiated silicon:correlations with the divacancy," Phys. Rev. 152 (2), 761-774 (1966).
    • (1966) Phys. Rev. , vol.152 , Issue.2 , pp. 761-774
    • Cheng, L.J.1    Corelli, J.C.2    Corbett, J.W.3    Watkins, G.D.4
  • 7
    • 36849098291 scopus 로고
    • Direct evidence of divacancy formation in silicon by ion implantation
    • H. J. Stein, F. L. Vook, and J. A. Borders, "Direct evidence of divacancy formation in silicon by ion implantation," Appl. Phys. Lett. 14 (10), 328 (1969).
    • (1969) Appl. Phys. Lett. , vol.14 , Issue.10 , pp. 328
    • Stein, H.J.1    Vook, F.L.2    Borders, J.A.3
  • 10
    • 84886947428 scopus 로고    scopus 로고
    • Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection
    • J. K. Doylend, P. E. Jessop, and A. P. Knights, "Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection," Opt. Express 18 (14), 14671-14678 (2010).
    • (2010) Opt. Express , vol.18 , Issue.14 , pp. 14671-14678
    • Doylend, J.K.1    Jessop, P.E.2    Knights, A.P.3
  • 11
    • 84894400971 scopus 로고    scopus 로고
    • http://www.epixfab.eu
  • 13
    • 0036540246 scopus 로고    scopus 로고
    • Critical coupling and its control in optical waveguide-ring resonator systems
    • DOI 10.1109/68.992585, PII S1041113502008753
    • A. Yariv, "Critical coupling and its control in optical waveguide-ring resonator systems," Phot. Tech. Lett. 14 (4), 483-485 (2002). (Pubitemid 34491616)
    • (2002) IEEE Photonics Technology Letters , vol.14 , Issue.4 , pp. 483-485
    • Yariv, A.1
  • 14
    • 79955996106 scopus 로고    scopus 로고
    • Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon
    • DOI 10.1063/1.1448856
    • P. G. Coleman, C. P. Burrows, and A. P. Knights, "Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon," Appl. Phys. Lett. 80 (6), 947 (2002). (Pubitemid 34168022)
    • (2002) Applied Physics Letters , vol.80 , Issue.6 , pp. 947
    • Coleman, P.G.1    Burrows, C.P.2    Knights, A.P.3
  • 15
    • 71749103053 scopus 로고    scopus 로고
    • Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates
    • A. J. Smith, R. M. Gwilliam, V. Stolojan, A. P. Knights, P. G. Coleman, A. Kallis, and S. H. Yeong, "Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates," J. Appl. Phys. 106 (10), 103514 (2009).
    • (2009) J. Appl. Phys. , vol.106 , Issue.10 , pp. 103514
    • Smith, A.J.1    Gwilliam, R.M.2    Stolojan, V.3    Knights, A.P.4    Coleman, P.G.5    Kallis, A.6    Yeong, S.H.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.