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Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

Thermal annealing and temperature dependences of memory effect in organic memory transistor

(5) Ren, X C a Wang, S M a Leung, C W a Yan, F a Chan, P K L a,b

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CO-EXISTENCE; ELECTRON AND HOLE TRAPS; MEMORY EFFECTS; MEMORY WINDOW; NON-VOLATILE MEMORIES; OPERATING TEMPERATURE; ORGANIC MEMORIES; REAL-TIME TRANSFER; SILVER NANOPARTICLES; STRUCTURAL VARIATIONS; TEMPERATURE DEPENDENCE; TEMPERATURE SENSING; THERMAL MEMORY; THERMAL RESPONSE; THERMAL-ANNEALING;

CARRIER TRANSPORT; NANOPARTICLES; SILVER; TEMPERATURE;

ANNEALING;

EID: 79961034744 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3617477 Document Type: Article

Times cited : (16)

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