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Volumn , Issue , 2011, Pages 2245-2248

Time-dependency of the threshold voltage in memristive devices

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF PARAMETERS; EXPONENTIAL MODELS; TIME DEPENDENCY; TIME-SCALES;

EID: 79960884576     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2011.5938048     Document Type: Conference Paper
Times cited : (21)

References (9)
  • 1
    • 0015127532 scopus 로고
    • Memristor-the missing circuit element
    • Chua, L.O.: "Memristor-The Missing Circuit Element", IEEE Transactions on Circuit Theory, vol. CT-18, no. 5, pp. 507-519, 1971.
    • (1971) IEEE Transactions on Circuit Theory , vol.CT-18 , Issue.5 , pp. 507-519
    • Chua, L.O.1
  • 4
    • 61649104641 scopus 로고    scopus 로고
    • Programmable resistance switching in nanoscale two-terminal devices
    • S. H. Jo, K.-H. Kim and W. Lu, "Programmable Resistance Switching in Nanoscale Two-Terminal Devices", Nano Lett., vol. 9, pp. 496-500, 2009.
    • (2009) Nano Lett. , vol.9 , pp. 496-500
    • Jo, S.H.1    Kim, K.-H.2    Lu, W.3
  • 5
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • Chua, L.O., S.M. Kang: "Memristive Devices and Systems", Proceedings of the IEEE, vol. 64, no. 2, pp. 209-223, 1976.
    • (1976) Proceedings of the IEEE , vol.64 , Issue.2 , pp. 209-223
    • Chua, L.O.1    Kang, S.M.2
  • 7
    • 61649104641 scopus 로고    scopus 로고
    • Programmable resistance switching in nanoscale two-terminal devices
    • Jo, S.H., Kim, K.-H., Lu, W.: "Programmable Resistance Switching in Nanoscale Two-Terminal Devices", Nano Letters, vol. 9, no. 1, pp. 496-500, 2009.
    • (2009) Nano Letters , vol.9 , Issue.1 , pp. 496-500
    • Jo, S.H.1    Kim, K.-H.2    Lu, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.