Si memristive devices applied to memory and neuromorphic circuits

ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Volumn , Issue , 2010, Pages 13-16

  Jo, Sung Hyun ^a   Kim, Kuk Hwan ^a   Chang, Ting ^a   Gaba, Siddharth ^a   Lu, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Crossbar; Memristor; Neuromorphic circuit; Non volatile memory

Indexed keywords

ANALOG DEVICES; CONDUCTING FILAMENT; CONTINUOUS MOTIONS; CROSS-BAR STRUCTURES; CROSSBAR; EXCELLENT PERFORMANCE; HIGH DENSITY; INCREMENTAL CONDUCTANCE; ION MOTIONS; MATERIAL STRUCTURE; MEMRISTOR; NANO SCALE; NANOSCALE ANALOG; NEUROMORPHIC; NEUROMORPHIC CIRCUITS; NON-VOLATILE MEMORIES; ON/OFF RATIO; REPRODUCIBILITIES; SI MATRIX; SI-BASED;

FABRICS; NANOSTRUCTURED MATERIALS; SILICON;

DIGITAL DEVICES;

EID: 77956006270     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2010.5537135     Document Type: Conference Paper

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