Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Arehart, A R ^a   Sasikumar, A ^a   Via, G D ^b   Winningham, B ^b   Poling, B ^c   Heller, E ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Wyle Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CHARACTERIZATION METHODS; DEEP LEVEL; TRAP ENERGY; VIRTUAL GATE;

DRAIN CURRENT; ELECTRON DEVICES; ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79951818902     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703396     Document Type: Conference Paper

References (13)

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