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Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures

(4) Ryzhii, Maxim a,c Otsuji, Taiichi b,c Mitin, Vladimir d Ryzhii, Victor a,c

a UNIVERSITY OF AIZU (Japan)

b TOHOKU UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

d the State University of New York (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTIVITY; DEVICE STRUCTURES; ELEVATED TEMPERATURE; GRAPHENE LAYERS; INFRARED PHOTODIODE; INTERBAND; INTERBAND TUNNELING; LOW RATES; P-I-N JUNCTIONS; RESPONSIVITY; ROOM TEMPERATURE; TERA HERTZ; THERMOGENERATION; WIDE RADIATION;

GRAPHENE; SOLIDS;

RADIATION DETECTORS;

EID: 79960660451 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.070117 Document Type: Article

Times cited : (21)

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