Ex-situ and in-situ analyses on reaction mechanism of CuInSe2 (CIS) formed by selenization of sputter deposited CuIn precursor with Se vapor

Solar Energy Materials and Solar Cells

Volumn 95, Issue 10, 2011, Pages 2786-2794

  Moon, Dong Gwon ^a,b   Ahn, Sejin ^a   Yun, Jae Ho ^a   Cho, Ara ^a   Gwak, Jihye ^a   Ahn, Seungkyu ^a   Shin, Keeshik ^a   Yoon, Kyunghoon ^a   Lee, Hi Deok ^b   Pak, Hisun ^c   Kwon, Sehan ^c  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b Chungnam National University   (South Korea)

^c LG Innotek Co Ltd   (South Korea)

Author keywords

AES; CuInSe2; Formation mechanism; Raman; XRD

Indexed keywords

AES; CUINSE2; FORMATION MECHANISM; RAMAN; XRD;

COPPER COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; VAPORS;

COPPER;

EID: 79960565103     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.05.028     Document Type: Article

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