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Volumn 110, Issue 1, 2011, Pages

The origin of p-type conduction in Li-N codoped ZnO: An ab initio calculation study

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CO-DOPED ZNO; IMPURITY BANDS; IONIZATION ENERGIES; N-DEFECTS; NEW SOURCES; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; PURE ZNO; VALENCE-BAND MAXIMUMS;

EID: 79960543750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3606410     Document Type: Article
Times cited : (22)

References (27)
  • 6
    • 0032634780 scopus 로고    scopus 로고
    • T. Yamamoto, and H. Katayama-Yoshida, 10.1143/JJAP.38.L166
    • M. Joseph, H. Tabata, T. Kawai, T. Yamamoto, and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2, 38, L166 (1999). 10.1143/JJAP.38.L166
    • (1999) Jpn. J. Appl. Phys. , vol.38 , Issue.PART. 2 , pp. 166
    • Joseph, M.1    Tabata, H.2    Kawai, T.3
  • 11
    • 0011236321 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.59.1758
    • G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
    • (1999) Phys. Rev. B , vol.59 , pp. 1758
    • Kresse, G.1    Joubert, D.2
  • 13
    • 25744460922 scopus 로고
    • 10.1103/PhysRevB.50.17953
    • P. E. Blochl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50.17953
    • (1994) Phys. Rev. B , vol.50 , pp. 17953
    • Blochl, P.E.1
  • 15
    • 0030190741 scopus 로고    scopus 로고
    • Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
    • DOI 10.1016/0927-0256(96)00008-0, PII S0927025696000080
    • G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996). 10.1016/0927-0256(96)00008-0 (Pubitemid 126412269)
    • (1996) Computational Materials Science , vol.6 , Issue.1 , pp. 15-50
    • Kresse, G.1    Furthmuller, J.2
  • 17
  • 18
  • 20
    • 3142697800 scopus 로고    scopus 로고
    • 10.1016/j.commatsci.2004.02.024
    • S. H. Wei, Comput. Mater. Sci. 30, 337 (2004). 10.1016/j.commatsci.2004. 02.024
    • (2004) Comput. Mater. Sci. , vol.30 , pp. 337
    • Wei, S.H.1
  • 21
    • 69749098336 scopus 로고    scopus 로고
    • 10.1063/1.3195060
    • R. Y. Tian and Y. J. Zhao, J. Appl. Phys. 106, 043707 (2009). 10.1063/1.3195060
    • (2009) J. Appl. Phys. , vol.106 , pp. 043707
    • Tian, R.Y.1    Zhao, Y.J.2
  • 22
    • 34047120057 scopus 로고    scopus 로고
    • Possible approach to overcome the doping asymmetry in wideband gap semiconductors
    • DOI 10.1103/PhysRevLett.98.135506
    • Y. Yan, J. Li, S. H. Wei, and M. Al-Jassim, Phys. Rev. Lett. 98, 135506 (2007). 10.1103/PhysRevLett.98.135506 (Pubitemid 46515834)
    • (2007) Physical Review Letters , vol.98 , Issue.13 , pp. 135506
    • Yan, Y.1    Li, J.2    Wei, S.-H.3    Al-Jassim, M.M.4
  • 25
    • 33746363964 scopus 로고
    • 10.1103/PhysRevB.37.8958
    • S. H. Wei and A. Zunger, Phys. Rev. B 37, 8958 (1988). 10.1103/PhysRevB.37.8958
    • (1988) Phys. Rev. B , vol.37 , pp. 8958
    • Wei, S.H.1    Zunger, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.