Study on TSV with new filling method and alloy for advanced 3D-SiP

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 1981-1986

  Tsukada, Akihiro ^a   Sato, Ryohei ^a   Sekine, Shigenobu ^b   Kimura, Ryuji ^b   Kishi, Keijiroh ^b   Sato, Yukihiro ^a   Iwata, Yoshiharu ^a   Murata, Hidenori ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Napura Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLYING PRESSURE; FILLER MATERIALS; FILLING METHODS; GATE DENSITY; HIGH ASPECT RATIO; KEEP-OUT-ZONE; MANUFACTURABILITY; MASS PRODUCTION; METAL FILLING; SEMICONDUCTOR SCALING; SI WAFER; SMALL ASPECT RATIO;

BISMUTH; FILLERS; FILLING; INTERNET PROTOCOLS; LIQUID METALS; MACHINE TOOLS; PLASMA ETCHING; PRODUCTION ENGINEERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THREE DIMENSIONAL; TIN;

ASPECT RATIO;

EID: 79960401985     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898788     Document Type: Conference Paper

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