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Volumn 326, Issue 1, 2011, Pages 191-194

Spontaneous formation of GaN nanostructures by molecular beam epitaxy

(3) Kesaria, Manoj a Shetty, Satish a Shivaprasad, S M a

a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH (India)

Author keywords

A1. Nanorods; A1. Nanostructures; A3. Molecular beam epitaxy; B1. GaN; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

A1. NANORODS; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; B1. GAN; SEMI CONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL GROWTH; FIELD EMISSION MICROSCOPES; GALLIUM NITRIDE; GROWTH KINETICS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NANOTUBES; NITROGEN PLASMA; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

NANORODS;

EID: 79960158339 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.095 Document Type: Conference Paper

Times cited : (21)

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