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Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1658-1661

XPS analysis and valence band structure of a low-dimensional SiO 2/Si system after Si + ion implantation

(5) Zatsepin, D A a MacK, P b Wright, A E b Schmidt, B c Fitting, H J d

a RUSSIAN ACADEMY OF SCIENCES (Russian Federation)

b Thermo Fisher Scientific (United States)

c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

d UNIVERSITY OF ROSTOCK (Germany)

Author keywords

electronic structure; ion implantation; SiO 2; X ray emission spectra; X ray photoelectron spectra

Indexed keywords

CORE LEVELS; ESCAPE DEPTH; IMPLANTATION ENERGIES; MATRIX; MAXIMUM DENSITY; NANOCLUSTER FORMATION; SIO 2; THIN OXIDE LAYERS; X RAY EMISSION SPECTROSCOPY; X RAY PHOTOELECTRON SPECTRA; X-RAY EMISSION SPECTRA; XPS ANALYSIS;

ELECTROMAGNETIC WAVE EMISSION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; IONS; PHASE SEPARATION; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SCATTERING;

SILICON;

EID: 79960079377 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.201026713 Document Type: Article

Times cited : (28)

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