Soft X-ray emission spectroscopy of low-dimensional SiO 2/Si interfaces after Si + ion implantation and ion beam mixing

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 743-747

  Zatsepin, D A ^a,b   Kaschieva, S ^c   Zier, M ^d   Schmidt, B ^d   Fitting, H J ^e  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b URAL FEDERAL UNIVERSITY   (Russian Federation)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^e UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC COLLISION CASCADES; CONCENTRATION OF; HETEROSTRUCTURES; INTERFACE LAYER; ION BEAM MIXING; MATRIX; SOFT X RAY EMISSION SPECTROSCOPY; THIN OXIDE LAYERS;

EMISSION SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; PHASE INTERFACES; PHASE SEPARATION; SILICON COMPOUNDS; SILICON OXIDES;

SILICON;

EID: 77950993795     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925469     Document Type: Article

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