CrO codoping effect on electronic and optical properties of GaN

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 30, Issue 3, 2011, Pages 212-216

  Ke, Fu Shun ^a   Fu, Xiang Yu ^a   Duan, Guo Yu ^b   Wu, Song ^a   Wang, Song You ^a   Chen, Liang Yao ^a   Jia, Yu ^c  

^a FUDAN UNIVERSITY   (China)

^b Hebi Vocational and Technical College   (China)

^c ZHENGZHOU UNIVERSITY   (China)

Author keywords

Co doping; First principle; GaN; Third generation solar cell

Indexed keywords

ABSORPTION SPECTROSCOPY; CHROMIUM COMPOUNDS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS;

CO-DOPING; ELECTRONIC AND OPTICAL PROPERTIES; FIRST PRINCIPLE CALCULATIONS; FIRST PRINCIPLES; FORMATION ENERGIES; LOW ENERGY PHOTONS; SINGLE OXYGEN ATOM; THIRD GENERATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 79960065091     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: 10.3724/sp.j.1010.2011.00212     Document Type: Article

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