First principles study of the relative stability and the electronic properties of GaN

Computational Materials Science

Volumn 47, Issue 2, 2009, Pages 432-438

  Arbouche, O ^a   Belgoumene B ^b   Soudini, B ^a   Driz, M ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITY OF SAIDA   (Algeria)

Author keywords

Electronic properties; FP LAPW method; GaN; Generalized gradient approximation; Phase transition; Structural properties

Indexed keywords

AUGMENTED PLANE WAVES; BAND GAP ENERGY; BULK MODULUS; DENSITIES OF STATE; EXPERIMENTAL DATA; FIRST DERIVATIVE; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; FP-LAPW METHOD; GAN; GENERALIZED GRADIENT APPROXIMATION; GENERALIZED GRADIENT APPROXIMATIONS; LATTICE PARAMETERS; RELATIVE STABILITIES; ROCK SALT; THEORETICAL STUDY; WURTZITES; ZINC-BLENDE;

ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHIUM BATTERIES; PHASE STABILITY; SEMICONDUCTING GALLIUM; TIN; ZINC; ZINC SULFIDE;

STRUCTURAL PROPERTIES;

EID: 70449685701     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2009.09.007     Document Type: Article

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