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Journal of Analytical Atomic Spectrometry

Volumn 26, Issue 7, 2011, Pages 1534-1538

Laser ablation ICP-MS to determine Cu on a Si wafer prepared by ion sputtering

(2) Lee, J S a Lim, H B a

a Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION PROCESS; ANALYTICAL METHOD; CHEMICAL VAPOUR DEPOSITION; CONCENTRATION RATIO; CU ATOMS; DESOLVATION; EXPERIMENTAL ERRORS; INTERNAL STANDARDS; ION SPUTTERING; LA-ICP-MS; LASER-ABLATION-ICP-MS; MANUFACTURING PROCESS; PARTICLE GENERATION; REFERENCE MATERIAL; REFLECTIVE INDEX; SI WAFER; SILICON-BASED; SINGLE LASERS; STANDARD ADDITION; SURFACE MATERIALS;

ABLATION; ATOMS; CHEMICAL VAPOR DEPOSITION; GLASS; LASER ABLATION; LASER APPLICATIONS; MASS SPECTROMETERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; STANDARDS;

SILICON WAFERS;

EID: 79959925864 PISSN: 02679477 EISSN: 13645544 Source Type: Journal
DOI: 10.1039/c0ja00143k Document Type: Article

Times cited : (7)

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