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Volumn 98, Issue 25, 2011, Pages

Hybrid ZnO nanowire networked field-effect transistor with solution-processed InGaZnO film

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER PATH; GAP FILLING; NANO-NET; NANOWIRE-BASED TRANSISTORS; SOLUTION-PROCESSED; THRESHOLD VOLTAGE DISTRIBUTION; TRANSISTOR CHARACTERISTICS; ZNO; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES; ZNO TRANSISTORS;

EID: 79959587823     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3601466     Document Type: Article
Times cited : (15)

References (9)
  • 4
    • 0141605054 scopus 로고    scopus 로고
    • High-performance thin-film transistors using semiconductor nanowires and nanoribbons
    • DOI 10.1038/nature01996
    • X. Duan, C. Niu, V. Sahi, J. Chen, J. W. Parce, S. Empedocles, and J. L. Goldman, Nature (London) 0028-0836 425, 274 (2003). 10.1038/nature01996 (Pubitemid 37158399)
    • (2003) Nature , vol.425 , Issue.6955 , pp. 274-278
    • Duan, X.1    Niu, C.2    Sahi, V.3    Chen, J.4    Parce, J.W.5    Empedocles, S.6    Goldman, J.L.7
  • 7
    • 42549115307 scopus 로고    scopus 로고
    • Massive assembly of ZnO nanowire-based integrated devices
    • DOI 10.1088/0957-4484/19/9/095303, PII S0957448408665459
    • J. Kang, S. Myung, B. Kim, D. Oh, G. T. Kim, and S. Hong, Nanotechnology 0957-4484 19, 095303 (2008). 10.1088/0957-4484/19/9/095303 (Pubitemid 351588338)
    • (2008) Nanotechnology , vol.19 , Issue.9 , pp. 095303
    • Kang, J.1    Myung, S.2    Kim, B.3    Oh, D.4    Kim, G.T.5    Hong, S.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.