A simple in situ method to detect graphene formation at SiC surfaces

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Oida, S ^a   Hannon, J B ^a   Tromp, R M ^a   McFeely, F R ^a   Yurkas, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; IN-SITU; IN-SITU METHODS; SIMPLE METHOD; SYNTHESIS PROCESS; THERMIONIC CURRENTS; THERMIONIC EMISSION CURRENT;

SILICON CARBIDE; THERMIONIC EMISSION;

GRAPHENE;

EID: 79959476200     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3593483     Document Type: Article

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