The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 214-217

  Sugiyama, M ^a   Dejene, F B ^b   Kinoshita, A ^a   Fukaya, M ^a   Maru, Y ^a   Nakagawa, T ^a   Nakanishi, H ^a   Alberts, V ^c   Chichibu, S F ^d  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b UNIVERSITY OF THE FREE STATE   (South Africa)

^c UNIVERSITY OF JOHANNESBURG   (South Africa)

^d Graduate School of Pure and Applied Sciences   (Japan)

Author keywords

A1. Growth models; A3. Physical vapor deposition processes; B2. Semiconducting ternary compounds

Indexed keywords

ANNEALING; CONVERSION EFFICIENCY; PHASE SEPARATION; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS;

ACCEPTOR RECOMBINATION EMISSIONS; GROWTH MODELS; SELENIZATION; SEMICONDUCTING TERNARY COMPOUNDS;

COPPER COMPOUNDS;

EID: 33947185273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.062     Document Type: Article

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