Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

Organic Electronics

Volumn 12, Issue 9, 2011, Pages 1477-1482

  Li, Chen Yan ^a   Chou, Ying Nien ^a   Syu, Jia Rong ^a   Hsieh, Sung Nien ^a   Tsai, Tzung Da ^a   Wu, Chen Hao ^a   Guo, Tzung Fang ^a   Hsu, Wei Chou ^a   Hsu, Yao Jane ^b   Wen, Ten Chin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

Capacitance voltage characteristics; Inverted PLED; Self assembled monolayer; Zinc oxide

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRON INJECTION; ELECTRONS; II-VI SEMICONDUCTORS; SELF ASSEMBLED MONOLAYERS; THRESHOLD VOLTAGE; ZINC OXIDE;

CAPACITANCE VOLTAGE CHARACTERISTIC; EFFICIENT ELECTRON INJECTION; ELECTRON INJECTION LAYERS; ELECTRONS AND HOLES; INJECTION MECHANISMS; INVERTED PLED; POLYMER LIGHT EMITTING DIODE; POLYMER LIGHT-EMITTING DIODES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79959421961     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.05.022     Document Type: Article

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