Effect of source-drain electric field on the Meyer-Neldel energy in organic field effect transistors

Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

  Ullah, Mujeeb ^a   Pivrikas, A ^a   Fishchuk, I I ^b,d   Kadashchuk, A ^c,d   Stadler, P ^a   Simbrunner, C ^a   Sariciftci, N S ^a   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

^c IMEC   (Belgium)

^d INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELS; CHARGE MOBILITIES; DENSITY-OF-STATES; DISORDER PARAMETERS; EXPERIMENTAL DATA; FIELD DEPENDENCE; GAUSSIANS; SOURCE-DRAIN; THEORETICAL MODELS;

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79958847740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3584131     Document Type: Article

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