Dependence of Meyer-Neldel energy on energetic disorder in organic field effect transistors

Applied Physics Letters

Volumn 96, Issue 21, 2010, Pages

  Ullah, Mujeeb ^a   Fishchuk, I I ^b   Kadashchuk, A ^c,d   Stadler, P ^a   Pivrikas, A ^a   Simbrunner, C ^a   Poroshin, V N ^d   Sariciftci, N S ^a   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

^c IMEC   (Belgium)

^d INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF DISORDER; GAUSSIAN DENSITY; GROWTH CONDITIONS; MEYER-NELDEL RULES; ORGANIC SEMICONDUCTOR; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TRANSPORT MODELS;

CARRIER MOBILITY; ORGANIC FIELD EFFECT TRANSISTORS; SEMICONDUCTOR GROWTH;

FIELD EFFECT TRANSISTORS;

EID: 77956232492     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3435477     Document Type: Article

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