SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

Journal of Semiconductors

Volumn 32, Issue 5, 2011, Pages

  Chaudhry, Amit ^a   Roy, J N ^b   Sangwan, S ^a  

^a PANJAB UNIVERSITY   (India)

^b Solar Semiconductro Pvt Ltd   (India)

Author keywords

columbic; mobility; phonon; SiGe; strained Si; surface roughness

Indexed keywords

ANALYTICAL MODEL; BASIC THEORY; BIAXIAL STRAINS; COLUMBIC; METAL OXIDE SEMICONDUCTOR; MOBILITY MODEL; SIGE; STRAINED-SI; SURFACE ROUGHNESS SCATTERING;

ELECTRON MOBILITY; ELECTRONS; MATHEMATICAL MODELS; METALLIC COMPOUNDS; MODELS; MOS DEVICES; PHONONS; SCATTERING; SEMICONDUCTOR DEVICES; SILICON; SURFACE PROPERTIES; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958260967     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/5/054001     Document Type: Article

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