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Volumn 519, Issue 19, 2011, Pages 6583-6586
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Light intensity effects on electrical properties of AgIn5S 8 thin films
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Author keywords
Chalcogenide; Electronic transport; Evaporation; Grain boundaries; Illumination; Thin films
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Indexed keywords
A-DENSITY;
CONDUCTIVITY ACTIVATION ENERGY;
CONDUCTIVITY MEASUREMENTS;
CURRENT CONDUCTION MECHANISMS;
DENSITY OF LOCALIZED STATE;
ELECTRICAL CONDUCTIVITY;
ELECTRICAL MEASUREMENT;
ELECTRON-HOLE RECOMBINATION;
ELECTRONIC TRANSPORT;
EXCITATION INTENSITY;
HOPPING DISTANCES;
HOPPING ENERGIES;
LIGHT ILLUMINATION;
LIGHT INTENSITY;
LOCALIZATION LENGTH;
POLYCRYSTALLINE;
TEMPERATURE REGIONS;
TRAP DENSITY;
VARIABLE RANGE HOPPING;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
FERMI LEVEL;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
PHASE CHANGE MEMORY;
THERMIONIC EMISSION;
THIN FILMS;
ACTIVATION ENERGY;
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EID: 79958220465
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.05.001 Document Type: Article |
Times cited : (10)
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References (22)
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