One-step electrodeposition of amorphous carbon films containing WO 3 with high conductivity and good wettability

Surface and Interface Analysis

Volumn 43, Issue 7, 2011, Pages 1064-1068

  Huang, Deming ^a,b   Wan, Shanhong ^a,b   Wang, Liping ^a   Xue, Qunji ^a  

^a LANZHOU INSTITUTE OF CHEMICAL PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

diamond like films; electrical conductivity; electrochemical deposition; nanocrystalline particles; tungsten trioxide; wetting ability

Indexed keywords

DIAMOND-LIKE FILM; ELECTRICAL CONDUCTIVITY; ELECTROCHEMICAL DEPOSITION; NANOCRYSTALLINE PARTICLE; TUNGSTEN TRIOXIDE; WETTING ABILITY;

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; DIAMOND LIKE CARBON FILMS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL PROPERTIES; ELECTRODEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METHANOL; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; WETTING;

CARBON FILMS;

EID: 79958214022     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3692     Document Type: Article

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