MISFET structures with barium titanate as a dielectric layer for application in memory cells

Microelectronics Reliability

Volumn 51, Issue 7, 2011, Pages 1187-1191

  Firek, Piotr ^a   Szmidt, Jan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE THIN FILMS; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; DEPOSITED LAYER; DIELECTRIC LAYER; ELECTRICAL CHARACTERIZATION; ELECTRONIC PARAMETERS; IV CHARACTERISTICS; MEMORY CELL; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; RADIO FREQUENCY PLASMA; SI SUBSTRATES; VOLTAGE STRESS;

ALUMINUM COATINGS; BARIUM; LANTHANUM; LANTHANUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; SINTERING; THIN FILMS;

BARIUM TITANATE;

EID: 79958106980     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.03.001     Document Type: Conference Paper

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