SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 3, 2011, Pages

Two-dimensional III-V nucleation on Si for nonlinear optics

(3) Lin, Angie C a Harris, James S a Fejer, M M b

a STANFORD UNIVERSITY (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; GALLIUM PHOSPHIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; NUCLEATION; SEMICONDUCTOR ALLOYS; VANADIUM METALLOGRAPHY;

ANTIPHASE DOMAINS; FILM QUALITY; NUCLEATION LAYERS; RMS ROUGHNESS;

SILICON;

EID: 79958083224 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3562191 Document Type: Article

Times cited : (10)

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