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Volumn 13, Issue 23, 2011, Pages 11367-11372

H atom adsorption and diffusion on Si(110)-(1×1) and (2×1) surfaces

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[No Author keywords available]

Indexed keywords


EID: 79958042360     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/c1cp20108e     Document Type: Conference Paper
Times cited : (9)

References (39)
  • 33
    • 79958071253 scopus 로고    scopus 로고
    • V. Brázdová and D. R. Bowler, in preparation
    • V. Brázdová and D. R. Bowler, in preparation
  • 39
    • 0001674880 scopus 로고
    • The calculated binding energies in ref. 39, given with respect to one H atom, are between 3.01 eV and 3.45 eV. In the present work the H binding energy at the 1-1 site is 3.17 eV with respect to one H atom (or -3.17 eV, consistent with the definition in eqn (1))
    • C. J. Wu E. A. Carter Chem. Phys. Lett. 1991 185 172
    • (1991) Chem. Phys. Lett. , vol.185 , pp. 172
    • Wu, C.J.1    Carter, E.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.