Impact of insertion of ultrathin TaOx layer at the Pt/TiO 2 interface on resistive switching characteristics

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1152-1154

  Wei, Guobin ^a   Murakami, Hideki ^a   Fujioka, Tomohiro ^a   Ohta, Akio ^a   Goto, Yuta ^a   Higashi, Seiichiro ^a   Miyazaki, Seiichi ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Redox reaction; Stack structure; Tantalum oxide; Titanium oxide

Indexed keywords

INITIAL RESISTANCE; OXYGEN RESERVOIR; PT ELECTRODE; RESISTIVE SWITCHING; STACK STRUCTURE; TIO; ULTRA-THIN;

PLATINUM; REDOX REACTIONS; TANTALUM; TANTALUM OXIDES; TITANIUM; TITANIUM DIOXIDE;

SWITCHING SYSTEMS;

EID: 79958032097     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.114     Document Type: Conference Paper

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