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Volumn 323, Issue 1, 2011, Pages 301-303
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Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
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Author keywords
Low dimensional structures; Molecular beam epitaxy; Nanostructures; Semiconducting IIIV material
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Indexed keywords
DIFFUSION KINETICS;
FLUX RATIO;
INAS;
LOW-DIMENSIONAL STRUCTURES;
SEMI CONDUCTING III-V MATERIALS;
SUBSTRATE ORIENTATION;
V/III RATIO;
EPITAXIAL GROWTH;
GROWTH KINETICS;
INDIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR ORIENTATION;
NANOWIRES;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR GROWTH;
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EID: 79958009507
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.125 Document Type: Article |
Times cited : (9)
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References (15)
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