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Volumn 323, Issue 1, 2011, Pages 301-303

Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy

Author keywords

Low dimensional structures; Molecular beam epitaxy; Nanostructures; Semiconducting IIIV material

Indexed keywords

DIFFUSION KINETICS; FLUX RATIO; INAS; LOW-DIMENSIONAL STRUCTURES; SEMI CONDUCTING III-V MATERIALS; SUBSTRATE ORIENTATION; V/III RATIO;

EID: 79958009507     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.125     Document Type: Article
Times cited : (9)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.