Characterization of rubrene polycrystalline thin film transistors fabricated using various heat-treatment conditions

Thin Solid Films

Volumn 519, Issue 16, 2011, Pages 5562-5566

  Yoon, Youngwoon ^a   Kim, Songhui ^a   Lee, Hanju ^a   Kim, Taedong ^a   Babajanyan, Arsen ^a   Lee, Kiejin ^a   Friedman, Barry ^b  

^a Sogang University   (South Korea)

^b SAM HOUSTON STATE UNIVERSITY   (United States)

Author keywords

Heat treatment; Microwave reflection; Organic field effect transistor; Rubrene

Indexed keywords

AMORPHOUS PHASE; CRYSTALLINE PHASE; FIELD-EFFECT MOBILITIES; HEAT TREATMENT TEMPERATURE; HEAT-TREATMENT PROCESS; IN-SITU; MICROWAVE REFLECTION; NEAR-FIELD MICROWAVE MICROPROBE; ORTHORHOMBIC STRUCTURES; POLYCRYSTALLINE THIN FILM TRANSISTORS; POST ANNEALING; PREANNEALING; RUBRENE THIN FILMS; RUBRENES;

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL STRUCTURE; FIELD EFFECT TRANSISTORS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 79957996066     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.004     Document Type: Article

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