Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 194-197

  Huggenberger, A ^a   Schneider, C ^a   Drescher, C ^a   Heckelmann, S ^a   Heindel, T ^a   Reitzenstein, S ^a   Kamp, M ^a   Hofling S ^a   Worschech, L ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

Nanostructures; Quantum dots; Semiconducting IIIV materials; Site controlled growth

Indexed keywords

ALIGNMENT TECHNIQUE; DEVICE INTEGRATION; ELECTRICALLY OPERATED DEVICES; HIGH SUBSTRATE TEMPERATURE; INHOMOGENEOUS BROADENING; PIN DIODE; QUANTUM DOT; SEMI CONDUCTING III-V MATERIALS; SITE-CONTROLLED GROWTH; SQUARE ARRAY;

SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ALLOYS;

EID: 79957984326     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.144     Document Type: Article

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