MBE growth of II-VI materials on GaSb substrates for photovoltaic applications

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2116-2119

  Wang, S ^a   Ding, D ^a   Liu, X ^b   Zhang, X B ^c   Smith, D J ^c   Furdyna, J K ^b   Zhang, Y H ^a  

^a Arizona State University   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials; B3. Solar cells

Indexed keywords

CRYSTAL GROWTH; DEFECT DENSITY; DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SOLAR CELLS; SOLAR ENERGY; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING II-VI MATERIALS; B3. SOLAR CELLS; HIGH-CRYSTALLINE QUALITIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; IN-SITU; LATTICE-MATCHED; MBE GROWTHS; MULTI-JUNCTION SOLAR CELLS; PHOTOVOLTAIC APPLICATIONS; QUANTUM WELLS; SMOOTH TRANSITIONS; STRUCTURAL CHARACTERIZATIONS; VISIBLE PHOTOLUMINESCENCES;

GALLIUM ALLOYS;

EID: 63349091177     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.189     Document Type: Article

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