Successful definition of nanowire and porous Si regions of different porosity levels by regular positive photoresist using metal-assisted chemical etching

Journal of Micromechanics and Microengineering

Volumn 21, Issue 6, 2011, Pages

  Zahedinejad, Mohammad ^a   Khaje, Mahdi ^b   Erfanian, Alireza ^b   Raissi, Farshid ^a  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

^b MALEK ASHTAR UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENT METHOD; ETCHING TIME; INTEGRATED CIRCUIT FABRICATION; MASKING LAYERS; METAL-ASSISTED CHEMICAL ETCHING; MINIMUM FEATURE SIZES; NANOPATICLES; POROSITY LEVEL; POROUS SI; SELECTIVE FORMATION; SI NANOWIRE; SI WAFER; SILVER NANOPARTICLES; SUBMICRON PATTERNING;

ETCHING; NANOPARTICLES; NANOWIRES; PALLADIUM; PHOTORESISTS; PLATINUM; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILVER;

SILICON WAFERS;

EID: 79957965675     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/6/065006     Document Type: Article

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