-
1
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
Canham, L. T., Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett., vol. 57, p. 1046, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 1046
-
-
Canham, L.T.1
-
2
-
-
0001929694
-
Biomedical applications of porous silicon
-
Institution of Engineering and Technology, London
-
Canham, T., Biomedical applications of porous silicon, EMIS Data Rev. Ser. 18, Institution of Engineering and Technology, London, 1997.
-
(1997)
EMIS Data Rev. Ser.
, vol.18
-
-
Canham, T.1
-
3
-
-
0036662298
-
Fabrication of 2-D and 3-D silicon photonic crystals by deep etching
-
Chelnokov, A., David, S., Wang, K., Marty, F., and Lourtioz, J. M., Fabrication of 2-D and 3-D silicon photonic crystals by deep etching, IEEE J. Selected Topics Quantum Electr., vol. 8, p. 919, 2002.
-
(2002)
IEEE J. Selected Topics Quantum. Electr.
, vol.8
, pp. 919
-
-
Chelnokov, A.1
David, S.2
Wang, K.3
Marty, F.4
Lourtioz, J.M.5
-
4
-
-
44049083052
-
Nanoscale three dimensional pattern formation in light emitting porous silicon
-
Chun, I. S., Edmond, K., and Xiuling, L., Nanoscale three dimensional pattern formation in light emitting porous silicon, Appl. Phys. Lett., vol. 92, 1911136, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 1911136
-
-
Chun, I.S.1
Edmond, K.2
Xiuling, L.3
-
5
-
-
0030086051
-
Deposition of tin oxide into porous silicon by atomic layer epitaxy
-
Ducso, C., Khanh, N. Q., Horvath, Z., Barsony, I., Utrianen, M., Lehto, S., Nieminen, M., and Niinisto, L., Deposition of tin oxide into porous silicon by atomic layer epitaxy, J. Electrochem. Soc., vol. 143, p. 683, 1996.
-
(1996)
J. Electrochem. Soc.
, vol.143
, pp. 683
-
-
Ducso, C.1
Khanh, N.Q.2
Horvath, Z.3
Barsony, I.4
Utrianen, M.5
Lehto, S.6
Nieminen, M.7
Niinisto, L.8
-
6
-
-
67349132488
-
Characterisation of the porous silicon layers
-
Fekih, Z., Otmani, F. Z., and Chabanne-Sari, N. E., Characterisation of the porous silicon layers, Moroccan Stat. Phys. Soc., vol. 7, p. 35, 2006.
-
(2006)
Moroccan Stat. Phys. Soc.
, vol.7
, pp. 35
-
-
Fekih, Z.1
Otmani, F.Z.2
Chabanne-Sari, N.E.3
-
9
-
-
1842595981
-
Porous silicon formation: A quantum wire effect
-
Lehmann, V. and Gosele, U., Porous silicon formation: A quantum wire effect, Appl. Phys. Lett., vol. 58, p. 856, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 856
-
-
Lehmann, V.1
Gosele, U.2
-
10
-
-
0141526288
-
Submicrometer functionalization of porous silicon by electron beam lithography
-
Rocchia, M., Borini, S., Rossi, A. M., Boarino, I., and Amato, G., Submicrometer functionalization of porous silicon by electron beam lithography, Adv. Mater., vol. 15, p. 1465, 2003.
-
(2003)
Adv. Mater.
, vol.15
, pp. 1465
-
-
Rocchia, M.1
Borini, S.2
Rossi, A.M.3
Boarino, I.4
Amato, G.5
-
11
-
-
84952503562
-
Thirteen ways to look at the correlation coefficient
-
Rodgers, J. L. and Nicewander, W. A., Thirteen ways to look at the correlation coefficient, Am. Stat., vol. 42, p. 59, 1995.
-
(1995)
Am. Stat.
, vol.42
, pp. 59
-
-
Rodgers, J.L.1
Nicewander, W.A.2
-
12
-
-
35648997421
-
Cr/Au-based Ohmic contacts to n-GaN
-
Sheul, J. K., Hu, C. C., and Lee, M. L., Cr/Au-based Ohmic contacts to n-GaN, Appl. Phys. Lett., vol. 91, 182106, 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 182106
-
-
Sheul, J.K.1
Hu, C.C.2
Lee, M.L.3
-
13
-
-
0029221050
-
Realization of porous silicon membranes for gas sensor applications
-
Taliercio, T., Dilhan, M., Massone, E., Gué, A. M., Fraisse, B., and Foucaran, A., Realization of porous silicon membranes for gas sensor applications, Thin Solid Films, vol. 255, p. 310, 1995.
-
(1995)
Thin Solid Films
, vol.255
, pp. 310
-
-
Taliercio, T.1
Dilhan, M.2
Massone, E.3
Gué, A.M.4
Fraisse, B.5
Foucaran, A.6
-
14
-
-
0025484870
-
Porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer
-
Yamana, M., Kashiwazaki, N., Kinoshita, A., Nakano, T., Yamamoto, M., and Walton, W., Porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer, J. Electrochem. Soc., vol. 137, p. 2925, 1990.
-
(1990)
J. Electrochem. Soc.
, vol.137
, pp. 2925
-
-
Yamana, M.1
Kashiwazaki, N.2
Kinoshita, A.3
Nakano, T.4
Yamamoto, M.5
Walton, W.6
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