Compensation for EUV multilayer defects within arbitrary layouts by absorber pattern modification

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Pang, Linyong ^a   Clifford, Chris ^a   Hu, Peter ^a   Peng, Danping ^a   Li, Ying ^a   Chen, Dongxue ^a   Satake, Masaki ^a   Tolani, Vikram ^a   He, Lin ^a  

^a Luminescent Technologies Inc   (United States)

Author keywords

EUV defect disposition; EUV mask; extreme ultraviolet lithography; fast lithography simulation; mask defect; mask repair; multilayer defect; multilayer defect compensation

Indexed keywords

EUV DEFECT DISPOSITION; EUV MASK; FAST LITHOGRAPHY SIMULATION; MASK DEFECT; MASK REPAIR; MULTILAYER DEFECT; MULTILAYER DEFECT COMPENSATION;

COMPUTER SIMULATION; LITHOGRAPHY; MULTILAYERS; PHOTOMASKS;

DEFECTS;

EID: 79957949221     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879556     Document Type: Conference Paper

References (6)

1. Clifford, C. H., Neureuther, A. R., "Fast simulation methods and modeling for extreme ultraviolet masks with buried defects", J. Micro/Nanolith. MEMS MOEMS 8, 031402 (2009).
2. Clifford, C. H., et al, "Compensation methods using a new model for buried defects in extreme ultraviolet lithography masks", SPIE Vol. 7823 (2010)
3. Gullikson, E. M., et al. "Practical approach for modeling extreme ultraviolet lithography mask defects," J. Vac. Sci. Technol. B 20, 81 (2002).
4. Clifford, C. H., "Simulation and Compensation Methods for EUV Lithography Masks with Buried Defects", Ph.D. Dissertation, Department of Electrical Engineering and Computer Sciences, University of California-Berkeley, (2010).
5. Abrams, S. and Pang, L., "Fast inverse lithography technology", Proc. SPIE 6154, 61541J (2006)
6. Pang, L. et al, "Optimization from Design Rules, Source and Mask, to Full Chip with a Single Computational Lithography Framework: Level-Set-Methods-based Inverse Lithography Technology (ILT)", Proc. SPIE 7640, 764023 (2010)