Epitaxial upward transport of Al at the beginning of the Al-induced layer exchange process

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 5-6, 2011, Pages 172-174

  Birajdar, Balaji ^a   Antesberger, Tobias ^b   Stutzmann, Martin ^b   Spiecker, Erdmann ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Crystallization; Electron microscopy; Solar cells; Thin films

Indexed keywords

AMORPHOUS SI; CELL BOUNDARY; DENDRITIC CELLS; DIFFERENT LENGTH SCALE; EPITAXIAL ISLANDS; LAYER EXCHANGE; NUMBER DENSITY; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON; CRYSTALLIZATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; QUARTZ; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 79957670170     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105110     Document Type: Article

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