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Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

(7) Pereira, L M C a,b,c Wahl, U b Decoster, S c Correia, J G b Da Silva, M R d Vantomme, A c Araujo J P a

a UNIVERSITY OF PORTO (Portugal)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

c KU LEUVEN (Belgium)

d CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT IDENTIFICATIONS; EMISSION CHANNELING; GAAS; HIGH THERMAL STABILITY; INTERSTITIAL SITES; LATTICE LOCATIONS; MN ATOMS; NEAREST NEIGHBORS; P-TYPE; ROOM TEMPERATURE FERROMAGNETISM;

ACTIVATION ENERGY; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; THERMODYNAMIC STABILITY;

MANGANESE;

EID: 79957544901 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3592568 Document Type: Article

Times cited : (29)

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