Lattice sites and damage annealing of Er in low-dose implanted GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 492-496

  Wahl, U ^a   Vantomme, A ^a   Langouche, G ^a  

^a KU LEUVEN   (Belgium)

Author keywords

Emission channeling; Erbium; GaAs; Ion implantation; Lattice location

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON EMISSION; ERBIUM; EVAPORATION; ION IMPLANTATION; RADIATION DAMAGE; THERMAL EFFECTS;

ELECTRON EMISSION CHANNELING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033513891     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00673-9     Document Type: Article

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