Atomic layer deposition of thin VNx Film from tetrakis(diethylamido)vanadium precursor

Japanese Journal of Applied Physics

Volumn 50, Issue 5 PART 2, 2011, Pages

  Takeyama, Mayumi B ^a   Sato, Masaru ^a   Sudoh, Hiroshi ^b   Machida, Hideaki ^b   Ito, Shun ^c   Aoyagi, Eiji ^c   Noya, Atsushi ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b Gas phase Growth Ltd   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INCUBATION TIME; LOW CARBON; NANOCRYSTALLINES; OPTIMIZED CONDITIONS; RANDOM ORIENTATIONS; TETRAKIS; THIN BARRIERS; VANADIUM NITRIDES;

ATOMIC LAYER DEPOSITION; NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM; VANADIUM ALLOYS;

FILM GROWTH;

EID: 79957523581     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.05EA06     Document Type: Article

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