Reactively sputtered nanocrystalline ZrN film as extremely thin diffusion barrier between Cu and SiO2

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 3, 2010, Pages

  Takeyama, Mayumi B ^a   Sato, Masaru ^a   Aoyagi, Eiji ^a,b   Noya, Atsushi ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER PROPERTIES; CU DIFFUSION; CU(1 1 1); FORMATION PROCESS; GRAZING INCIDENCE X-RAY REFLECTIVITIES; LOW DEPOSITION TEMPERATURE; NANOCRYSTALLINES; NUCLEATION PROCESS; STABLE PHASE; THIN BARRIERS; ZRN FILMS;

FILM GROWTH; HOLOGRAPHIC INTERFEROMETRY; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

COPPER;

EID: 77953156508     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.05FA06     Document Type: Article

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